Semiconductor Laser Device Engineer

Job Description

We have an opening for a Semiconductor Laser Device Engineer with expertise in semiconductor laser diodes. You will define, develop, and deploy high power laser diode arrays. You will have an advanced understanding of semiconductor optoelectronics to specify, design, and oversee deployment of high-power laser diode arrays and work to determine requirements, set specifications and address array technology options including thermal management and electronic drivers. You will work with LLNL team members to expand the vision for continued development of diode laser technology. This position is in the Laser Systems Engineering & Operations (LSEO) Division of the Engineering Directorate.

This position will be filled at either level ( or based on knowledge and related experience as assessed by the hiring team. Additional job responsibilities at the level (outlined below) will be assigned if hired at that level.

You will

• Work under limited direction with moderate responsibility, use comprehensive knowledge, and exercise independent judgment to determine methods and recommend improvements within established frameworks and contribute to the fulfillment of project and organizational goals.
• Provide engineering support for the design, build, and execution of laboratory experiments for characterizing high power semiconductor diode lasers.
• Assist in maintaining test instrumentation cross-calibration, documenting test procedures, archiving test results, updating analysis software, and defining appropriate database reports.
• Perform data analysis of test results and write analysis codes in support, as needed.
• Participate in performing optical, electronic, and thermal modeling in support of experimental efforts.
• Contribute to the LLNL technical team on diode laser pump development and procurement contracts; collaborate closely with the laser team to ensure successful on-time deployment of the diode pump subsystem.
• Prepare and author moderately complex technical documents and presentations.
• Support engineering operations and participate in defining process improvements.
• Contribute to research into new approaches to record high power semiconductor diode lasers.
• Select methods, techniques, and evaluation criteria to recommend improvements and conduct moderately complex experiments to characterize subcomponents.
• Participate in the fielding of these new systems on Inertial Confinement Fusion (ICF) physics platforms and other high-energy laser platforms.
• Perform other duties as assigned.

Additional job responsibilities, at the level:

• Function independently with minimal direction, taking significant responsibility and using advanced knowledge and judgment to establish objectives, prioritize parallel tasks, allocate resources, and collaborate in the development of innovative methods/technology to guide the completion of projects and contribute to the development of organizational goals.
• Design, build, and commission a large range of complex semiconductor laser characterization tools and experiments.
• Design and execute complex experiments to characterize laser diode components.
• Develop, implement, and utilize advanced data analysis and simulation software to support experimental goals and provide solutions to complex problems.
• Guide the completion of a project, establish project objectives and strategy, and influence technical direction by applying high-level technical concepts and techniques to drive successful outcomes for deliverables.
• Conduct advanced research into novel approaches to enhance laser diode technology in conjunction with both university and industrial partners.
• Specify, procure, evaluate, and deploy commercially available laser diode arrays on LLNL systems.

Qualifications

• Ability to obtain and maintain a DOE Q-level security clearance which requires Citizenship.
• Bachelor’s degree in Electrical Engineering or Physics, or a relevant technical field, or the equivalent combination of education and previous relevant experience.
• Comprehensive level knowledge of semiconductor devices, laser physics, and optics.
• Demonstrated practical experience utilizing optics and laboratory instrumentation to conduct experiments in the area of optoelectronic devices.
• Comprehensive knowledge of and experience with the theory and use of laser diodes.
• Comprehensive knowledge of and experience with laser diode micro-optics, opto-electronic device packaging, and moderately complex reliability engineering principles.
• Experience identifying, defining, and solving multi-disciplinary problems in a timely, cost-effective manner.
• Proficient verbal and written communication skills necessary to effectively collaborate in a team environment, including the ability to prepare technical reports, deliver presentations, and explain technical information.

Additional qualifications, at the level

• Advanced knowledge of and significant experience with high power diode lasers, laser physics, and optics.
• Significant experience with complex opto-electronic device simulation, laser diode characterization, and/or optical simulation.
• Advanced communication, facilitation, and collaboration skills necessary to present and explain technical information, and provide advice to senior management and/or external sponsors.
• Significant experience interacting and cooperating with all levels of technical staff, managers, and vendors.
• Significant experience defining scope from often not well defined and/or rapidly changing requirements, including demonstrated ability and flexibility in reprioritizing and changing programmatic direction depending on emergent needs.

Qualifications We Desire

• Master’s degree or PhD in Electrical Engineering or Physics. Experience with high power laser diode arrays, laser diode simulation software, laser diode current driver requirements, III-V semiconductor fabrication and materials technologies, and/or opto-electronic component packaging.
• Experience with characterization of compound semiconductor optoelectronic devices and materials such as GaAs, InP, and/or GaN.
• Familiarity with epitaxial growth and material characterization techniques such as MOCVD, MBE, XRD, PL, ECV, AFM, SEM. Hall effect, and/or SIMS.
• Familiarity with semiconductor fabrication processes such as PECVD, RIE, ICP, wet etch, photolithography, and/or evaporation.
• Familiarity with the high-power laser diode industry or employment experience at an industrial manufacturer or end-user of laser diode components.
• Experience in writing technical specifications and statements of work.

Pay Range

$146,340 - $185,544 Annually for the level
$175,530 - $222,564 Annually for the level

This is the lowest to highest salary we in good faith believe we would pay for this role at the time of this posting; pay will not be below any applicable local minimum wage. An employee’s position within the salary range will be based on several factors including, but not limited to, specific competencies, relevant education, qualifications, certifications, experience, skills, seniority, geographic location, performance, and business or organizational needs.

Additional Information

#LI-Onsite

Position Information

This is a Career Indefinite position, open to Lab employees and external candidates.

Why Lawrence Livermore National Laboratory?

• Included in 2026 Best Places to Work by Glassdoor!
• Flexible
• 401(k)
• Relocation Assistance
• Education Reimbursement Program
• Flexible schedules (*depending on project needs)
• Our values - visit

Security Clearance

This position requires a Department of Energy (DOE) Q-level clearance. If you are selected, we will initiate a Federal background investigation to determine if you meet eligibility requirements for access to classified information or matter. Also, all L or Q cleared employees are subject to random drug testing. Q-level clearance requires citizenship.

Pre-Employment Drug Test

External applicant(s) selected for this position must pass a post-offer, pre-employment drug test. This includes testing for use of marijuana as Federal Law applies to us as a Federal Contractor.

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If you use a medical device, which pairs with a mobile device, you must still follow the rules concerning the mobile device in individual sections within Limited Areas. Sensitive Compartmented Information Facilities require separate approval. Hearing aids without wireless capabilities or wireless that has been disabled are allowed in Limited Areas, Secure Space and Transit/Buffer Space within buildings.

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